VLSI DESIGN AND TESTING | ECE Stream | Very Important Questions Explained With Concepts | All 5 Modules | BEC602| Last Moment Exam Preparation

About Course

Ace Your VLSI DESIGN AND TESTING (BEC602) Exams with Minimal Effort

Last-Minute VLSI DESIGN AND TESTING Exam Preparation: Score 80+ with Ease

Struggling with VLSI DESIGN AND TESTING (BEC602) exam preparations? Worry no more! This comprehensive video course is your ultimate guide to acing your exams with minimal effort. Our expert instructor has meticulously curated a set of Very Important Questions (VIQs) spanning all 5 modules, ensuring you can maximize your scores in the least amount of time.

What You’ll Learn:

Detailed explanations of Model Paper questions.
Insights into frequently repeated questions from previous years.
Expert-identified crucial questions for your upcoming exams.

Course Features:

Pre-recorded Video Lectures: 4-5 hours of intensive, yet easy-to-follow lectures designed for last-minute preparation.
Downloadable Study Materials: Access all the study materials used in the video lectures, available for download to aid your preparation.
Targeted Learning: Focus on essential questions to score 80+ in your semester exams without unnecessary effort.

Why This Course?

Efficient Preparation: Designed specifically for last-minute exam prep, this course helps you get ready in just one day.
Expert Guidance: Benefit from the knowledge and experience of our expert instructor who knows what it takes to score high.
Proven Results: Follow our structured approach to effortlessly achieve top marks.

Ideal For:

Students enrolled in VLSI DESIGN AND TESTING (BEC602) looking for a quick and effective way to prepare for their exams.
Anyone needing a comprehensive review of crucial exam topics in a short period.
Anyone looking to score 80+ with just studying for 1 day before the exam

Course Duration:

4-5 hours of video content

Access:

Immediate access to all video lectures and study materials upon enrollment.

Join Now: Transform your last-minute study session into a successful exam strategy. Enroll now and get ready to score 80+ with ease!

Note: This course is specially designed for last-moment exam preparation to ensure you excel with minimal effort. Just study one day before the exam and achieve top marks!

Course Content

MODULE 1

1.Explain the operation of MOSFET with necessary diagrams.Also derive the eq for drain current in linear and saturation region of operation

14:26
2.Draw the circuit of CMOS inverter and explain its DC transfer characteristics

12:51
3,Explain the following non-ideal effects channels length modulation ,mobility degradtion

06:42
4.Implement a D flipflop using transmission gate and explain its operation with necessary timing diagram

08:39
5.Implementation of a 4:1 multiplexer & 2:1 MUX using transmission gate

09:27
6.With necessary circuit diagram explain the operation of tristate inverter.Also realize 2:1 MUX using tristate inverter

09:08
7.Realize CMOS compound gate for function

09:33

MODULE 2

MODULE 3

Q1. Develop RC delay model to compute the delay of the logic circuit and calculate the delay of the unit sized inverter driving another unit inverter.

07:43
Q2. Construct necessary equivalent circuits using RC delay model to compute the propagation delay of 3-input NAND gate with transistors width chosen to achieve effective rise and fall resistance equal to that of a unit inverter.

09:14
Q3. Estimate the propagation delay for unit inverter driving ‘m’ identical unit inverters using Elmore delay.

11:02
Q4.problem

14:00
Q5.if a unit transistor

03:50
Q6. Explain linear delay model

16:22
Q6A. Explain: 1) pseudo nMOS 2) ganged CMOS 3) skewed gates 4) CVSL with necessary circuit examples.

28:16
Q7.Explain the various stage of planning

15:25

MODULE 4

MODULE 5

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About Course

Ace Your VLSI DESIGN AND TESTING (BEC602) Exams with Minimal Effort

Last-Minute VLSI DESIGN AND TESTING Exam Preparation: Score 80+ with Ease

What You’ll Learn:

Course Features:

Why This Course?

Ideal For:

Course Duration:

Access:

What Will You Learn?

Course Content

MODULE 1

1.Explain the operation of MOSFET with necessary diagrams.Also derive the eq for drain current in linear and saturation region of operation

2.Draw the circuit of CMOS inverter and explain its DC transfer characteristics

3,Explain the following non-ideal effects channels length modulation ,mobility degradtion

4.Implement a D flipflop using transmission gate and explain its operation with necessary timing diagram

5.Implementation of a 4:1 multiplexer & 2:1 MUX using transmission gate

6.With necessary circuit diagram explain the operation of tristate inverter.Also realize 2:1 MUX using tristate inverter

7.Realize CMOS compound gate for function

MODULE 2

Q.1 Explain various steps in CMOS n-well process with necessary diagrams.

Q.2 With neat diagrams, explain the lambda design rules for wires, contact cuts, Transistors and for two metal layers.

Q.3 Explain layout rules for transistors.

Q.4 Define scaling. Explain constant field scaling and constant voltage scaling and why constant voltage scaling is usually preferred over full scaling.

Q.5 Mention different types of MOSFET capacitances with necessary diagrams and equations. Capacitance in cut off, linear and saturation region.

Q 6.Draw the stick diagram for boolean function

MODULE 3

Q1. Develop RC delay model to compute the delay of the logic circuit and calculate the delay of the unit sized inverter driving another unit inverter.

Q2. Construct necessary equivalent circuits using RC delay model to compute the propagation delay of 3-input NAND gate with transistors width chosen to achieve effective rise and fall resistance equal to that of a unit inverter.

Q3. Estimate the propagation delay for unit inverter driving ‘m’ identical unit inverters using Elmore delay.

Q4.problem

Q5.if a unit transistor

Q6. Explain linear delay model

Q6A. Explain: 1) pseudo nMOS 2) ganged CMOS 3) skewed gates 4) CVSL with necessary circuit examples.

Q7.Explain the various stage of planning

MODULE 4

Q1. Explain resettable latches and flipflops using CMOS transmission gate.

Q2. Explain dynamic logic.

Q3. Explain pulsed latches with schematic and waveforms.

Q4. Explain domino logic.

Q5. Draw and explain the features of C2MOS latch.

Q6. With neat circuit diagrams, explain 4 transparent latches. Write the advantage and disadvantage of each.

Q7.problem

MODULE 5

Q.1 With neat schematic diagram explain the operation of full CMOS static RAM cell.

Q.2 With neat schematic diagram explain the operation of three transistor DRAM cell.

Q3. What is static RAM? With neat diagram explain any 3 static RAM circuit.

Q4. Draw the diagram of 4bit * 4bit NOR based ROM array, explain the functioning.

Q.5 Explain the different fault models.

Q6. Write short notes on: 1) Built in Self Test 2) Scan Design

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